发明名称 Voltage regulator for non-volatile memories implemented with low-voltage transistors
摘要 A voltage regulator (150I) integrated in a chip of semiconductor material is proposed. The regulator has a first input terminal for receiving a first voltage (Vhv) and an output terminal for providing a regulated voltage (Vreg) being obtained from the first voltage, the regulator including: a differential amplifier (205I) for receiving a comparison voltage (Vref) and a feedback signal (Vfb) being a function of the regulated voltage, and for proving a regulation signal (Vr) according to a comparison between the comparison voltage and the feedback signal, the differential amplifier having a first supply terminal being coupled with a reference terminal for receiving a reference voltage and a second supply terminal, a regulation transistor (MS) having a control terminal for receiving the regulation signal, and a conduction first terminal and a conduction second terminal being coupled through loading means (Rpup) between the reference terminal and the first input terminal of the regulator, the second terminal of the regulation transistor being coupled with the output terminal of the regulator, wherein the second supply terminal of the differential amplifier is coupled with a second input terminal of the regulator for receiving a second voltage (Vdd) being lower than the first voltage in absolute value, and wherein the regulator further includes a set of auxiliary transistors (MS1-MS5) being connected in series between the second terminal of the regulation transistor and the output terminal of the regulator, and control means (155) for controlling the auxiliary transistors according to the regulated voltage.
申请公布号 EP1892600(B1) 申请公布日期 2016.07.27
申请号 EP20060119456 申请日期 2006.08.24
申请人 MICRON TECHNOLOGY, INC. 发明人 CRIPPA, LUCA;RAGONE, GIANCARLO;SANGALLI, MIRIAM;CAMPARDO, GIOVANNI;MICHELONI, RINO
分类号 G11C5/14;G05F1/565;G11C16/30 主分类号 G11C5/14
代理机构 代理人
主权项
地址