| 摘要 |
A system for the radiation treatment of substrates, which includes at least one radiation source above the substrate holders in a chamber, which holders are to be equipped with substrates that are to be treated, and the chamber has means for maintaining a gas flow in the chamber, having at least one gas inlet and at least one gas outlet, characterized in that the at least one gas inlet is situated in the vicinity of the substrate holders so that gas flowing in by means of the at least one gas inlet first flows around the substrate holders before either exiting the chamber directly via the gas outlet or exiting after flowing around the at least one radiation source. |
