发明名称 成膜装置及び成膜方法
摘要 PROBLEM TO BE SOLVED: To add properly an additional element to a thin film, while depositing the highly homogeneous thin film by an ion plating method using a plasma gun.SOLUTION: At least a part of the inner peripheral surface of a cylindrical anode electrode 12 of a plasma gun 3 for discharging plasma for assisting film deposition into a vacuum vessel 2 for performing film deposition therein is constituted of a dopant member 12b containing an additional element to be added to a thin film to be deposited. The dopant member 12b is sputtered by plasma generated inside the anode electrode 12, and the additional element is discharged into the vacuum vessel 2 by sputtering.
申请公布号 JP5953205(B2) 申请公布日期 2016.07.20
申请号 JP20120234126 申请日期 2012.10.23
申请人 スタンレー電気株式会社 发明人 中村 奨
分类号 C23C14/32 主分类号 C23C14/32
代理机构 代理人
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