| 摘要 |
PROBLEM TO BE SOLVED: To provide an art capable of achieving low channel resistance and low leakage current in a semiconductor device having hetero junction which achieves normally-off by using an insulation gate part.SOLUTION: HFET 1 comprises: an electron transit layer 14; an electron supply layer 15; an insulation gate part 25 provided in a trench which pierces the electron supply layer 15 to reach a predetermined depth of the electron transit layer 14; and n-type corner regions 32, 34. The electron transit layer 14 is in contact with a part of a bottom face of the insulation gate part 25. The electron supply layer 15 is in contact with a part of each lateral face of the insulation gate part 25. The corner regions 32, 34 are in contact with at least a part of the insulation gate part 25 between a portion of the electron transit layer 14 in contact with the bottom face of the insulation gate part 25 and a portion of the electron supply layer 15 in contact with the lateral faces of the insulation gate part 25. |
