| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an active barrier structure capable of suppressing electrons injected from an emitter region into a substrate inner region reaching to a collector region, in a case where there is another element region between the emitter region and the collector region.SOLUTION: A semiconductor device comprises: a semiconductor substrate SUB; a p-type substrate inner region PSR; an n-type emitter region EMT; a collector region CTR; another element formation region; and an active barrier structure ABR. The emitter region EMT forms a pn junction with the substrate inner region PSR. The another element formation region and the active barrier structure are arranged between the emitter region EMT and the collector region CTR. The active barrier structure includes an n-type first region NR1 and a p-type second region PR2. The another element formation region is sandwiched between the first region NR1 and the second region PR2. An isolation region TI is formed in an area at least one of an area between the another element formation region and the first region NR1 and an area between the another element formation region and the second region PR2. |
