| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor module having improved cooling performance, high reliability, and low cost.SOLUTION: A power semiconductor module 1 comprises: a cooling fin 6 having a base portion and a fin portion 6c formed on the base portion; an insulating sheet 5 bonded to the base portion of the cooling fin 6; a heat spreader 4 that is a conductor bonded to the surface of the insulating sheet 5 opposite to the surface to which the cooling fin 6 is bonded; and an IGBT chip 2 bonded to the surface of the heat spreader 4 opposite to the surface to which the insulating sheet 5 is bonded. The base portion is constituted from a plurality of base portions 6a and 6b having different widths, each of the base portions 6a and 6b being formed so that the width becomes smaller as away from the insulating sheet 5. |
