发明名称 半導体基板の切断方法及び半導体基板の切断装置
摘要 PROBLEM TO BE SOLVED: To provide a cutting method and a cutting device of a semiconductor substrate capable of efficiently providing a chip with stable quality.SOLUTION: A cutting method of a semiconductor substrate comprises: a step (step S10) of forming a modified region along a cutting line L in a depth from a surface of the wafer W of approximate 60 μm to approximate 80 μm by irradiating the inside of the wafer W with laser beam; and a step (step S12) of grinding the wafer W from the rear surface to a reference surface being approximate 50 μm deep from the surface of the wafer W. In the step S12, a crack is developed in the modified region between the reference surface and the surface of the wafer W. The method further comprises: a step (step S14) for removing a work-affected layer formed on the rear surface of the wafer W as a result of the grinding and applying mirror finishing to the rear surface of the wafer W; a step (step S16) of applying an expanding tape to the rear surface of the wafer W; and a step (step S18) of breaking the wafer W along the cutting line and dividing it into chips T when the expanding tape is expanded outward.
申请公布号 JP5953645(B2) 申请公布日期 2016.07.20
申请号 JP20100256217 申请日期 2010.11.16
申请人 株式会社東京精密 发明人 押田 修平;清水 翼;藤田 隆;植木原 明
分类号 H01L21/301;B23K26/00;B23K26/40;B24B7/22;B24B37/10;B24B55/02;H01L21/304 主分类号 H01L21/301
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