| 发明名称 |
CONDUCTIVE BRIDGING MEMORY DEVICE WITH CATION SUPPLY ELECTRODE COMPRISING CU-GE-TE OR CU-SI-TE |
| 摘要 |
A Conductive Bridging Random Access Memory (CBRAM) device (1) is disclosed, comprising an insulating electrolyte element (2) sandwiched between a cation supply electrode (3) and a bottom electrode (4), whereby the cation supply electrode consists of a Cu x Z y Te z alloy with Z being Ge or Si and y > 15 at.%. |
| 申请公布号 |
EP3046155(A1) |
申请公布日期 |
2016.07.20 |
| 申请号 |
EP20160151111 |
申请日期 |
2016.01.13 |
| 申请人 |
IMEC VZW;UNIVERSITEIT GENT |
发明人 |
DEVULDER, WOUTER;GOUX, LUDOVIC;OPSOMER, KARL |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
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