| 摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable compound semiconductor device which can preliminarily find an occurrence of defects in a compound semiconductor layer and prevent the occurrence of defects by performing non-contact screening in a state of a substrate before forming the compound semiconductor layer thereby to improve yield and reduce manufacturing cost.SOLUTION: A compound semiconductor device manufacturing method comprises: irradiating a substrate surface of a SiC substrate 1 with polarized laser beams by a polarized laser 12 to detect light-emission from the SiC substrate 1 by a detection part 13; obtaining an in-plane distribution of a light-emission intensity of the SiC substrate 1 by a display part 14 to evaluate a nitrogen mixed amount in the SiC substrate 1; and subsequently, forming a compound semiconductor laminated structure 2 on the SiC substrate 1. |
