| 摘要 |
The thin-film light emitting diode chip (1) has a layer stack (2) made of a primary radiation surfaces (3,4) lying opposite to each other so that the thin-film light emitting diode chip has two primary radiation directions (5,6). The primary radiation surfaces are provided with measures (7,8) for improving the coupling of the light produced in the layer series. The layer sequence has adjacent layers (11,12) from an n-doped and p-doped indium gallium nitride. The contact paths are made up of indium tin oxide. An independent claim is also included for the method for producing a thin-film light emitting diode chip. |
