| 摘要 |
A method of producing a substantially rectangular semiconductor device 11 having at least one corner truncation 21 or corner cut-out 22 or side cut-out 31, comprises: a) providing a semiconductor substrate; b) making at least one opening 4 through the substrate by means of etching; and c) cutting the substrate along a first pair 5 of parallel lines, and along a second pair 6 of parallel lines perpendicular to the first pair. At least one of the dicing lines of the first/second pair passes through said opening 4. The etching may be any combination of existing isotropic/anisotropic front/back etching techniques. The through hole 22, cut-out or truncation may be performed by two different etching steps. The cut-out substrate may be used in a transistor outline package and may have elongated legs, which correspond to internal wire connection points 72. This method allows for the fabrication of MEMS semiconductor devices, wherein the substrate is shaped around obstructions by positioning them in the locations of the cut-outs; thus maximising the size of the die within the package. |
