| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor crystal for a radiation detection element capable of manufacturing a radiation detection element maintaining high energy resolution.SOLUTION: A compound semiconductor crystal comprising zinc cadmium telluride to which indium is added as an impurity is heat-treated at a first heat treatment temperature which is lower than a temperature at a crystal growth finish time of a compound semiconductor, and then, the compound semiconductor is heat-treated at a second heat treatment temperature which is lower than the first heat treatment temperature, to thereby produce a compound semiconductor for a radiation detection element. In this case, by setting the second heat treatment temperature to be ≥200°C and ≤420°C, the compound semiconductor for the radiation detection element has a product μτ(e) of the mobility μ of electron and the life τ of electron of ≥5.00E-04 cm/V, to thereby heighten energy resolution. |
