| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, along with the semiconductor device, in which voltage resistance failure or high resistance failure is hard to occur.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: forming a lower electrode 402 on a semiconductor substrate 401; forming an SiON film 403 on the lower electrode 402; forming, on a surface of the SiON film 403, an SiN film 404 whose dielectricity is higher than the SiON film 403; forming a conductive film on the SiN film 404; patterning the conductive film and the SiN film 404 to form an upper electrode 405 and exposing the SiON film 403; forming an SiON film 407 so as to cover the upper electrode 405 and the exposed SiON film 403; and removing a part of the SiON film 407 and the SiON film 403 by etching to form an opening 412 and forming a plug 413 in the opening. |
