发明名称 表示装置
摘要 An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion.
申请公布号 JP5951730(B2) 申请公布日期 2016.07.13
申请号 JP20140219953 申请日期 2014.10.29
申请人 株式会社半導体エネルギー研究所 发明人 木村 肇;坂田 淳一郎;豊高 耕平
分类号 H01L29/786;G02F1/1368;H01L21/28;H01L21/336;H01L21/8234;H01L27/088;H01L51/50;H05B33/14 主分类号 H01L29/786
代理机构 代理人
主权项
地址