SEMICONDUCTOR DEVICE HAVING SILICIDE AND METHOD OF FORMING THE SAME

摘要

The present invention relates to a semiconductor device having dual silicide to provide excellent electric properties. The method comprises: a step of forming a first fin containing N-type impurities and a second fin containing P-type impurities on a substrate; a step of forming a first gate electrode and a first source/drain area on the first fin; a step of forming a second gate electrode and a second source/drain area on the second fin; a step of forming an etch stopping layer on the first and second source/drain areas; a step of forming an insulation layer on the etch stopping layer; a step of forming a first plug connected to the first source/drain area and forming a second plug connected to the second source/drain area by penetrating the insulation layer and the etch stopping layer; a step of forming a first metal silicide layer in the first source/drain area; and a step of forming a second metal silicide layer having a material different from that of the first metal silicide layer and the thickness smaller than that of the first metal silicide layer in the second source/drain area. The upper ends of the first and second source/drain areas are formed at a level higher than the levels of upper ends of the first and second fins.