| 摘要 |
PROBLEM TO BE SOLVED: To actualize a gate drive circuit of a simple configuration, having no lower limit of a switching speed in order to reduce a high frequency noise by gently changing the gate voltage of a power semiconductor device.SOLUTION: The gate drive circuit includes a constant current gate drive circuit 2 for driving a capacitor 6 connected in parallel to the gate of a power semiconductor device 1. One end of the gate drive circuit 2 is connected to the gate of the power semiconductor device 1, whereas the other end is connected to a power semiconductor device control circuit 4 which obtains the gate current of the power semiconductor device 1. The constant current gate drive circuit 2 charges the gate capacitance of the power semiconductor device 1 with a constant current, and also sets a drive current value of the capacitor 6 to be a value larger than a lower limit current value by which the current of the constant current gate drive circuit 2 intermittently continues. |
