| 摘要 |
A semiconductor structure having: a silicon substrate having a crystallographic orientation; an insulating layer disposed over the silicon substrate; a silicon layer having a different crystallographic orientation than the crystallographic orientation of the substrate disposed over the insulating layer; and a column III-V transistor device having the same crystallographic orientation as the substrate disposed on the silicon substrate. In one embodiment, the column III-V transistor device is in contact with the substrate. In one embodiment, the device is a GaN device. In one embodiment, the crystallographic orientation of the substrate is <111> and wherein the crystallographic orientation of the silicon layer is <100>. In one embodiment, CMOS transistors are disposed in the silicon layer. In one embodiment, the column III-V transistor device is a column III-N device. In one embodiment, a column III-As, III-P, or III-Sb device is disposed on the top of the <100> silicon layer. |
