| 摘要 |
PROBLEM TO BE SOLVED: To increase curvature of a corner of a trench bottom in a silicon carbide semiconductor substrate having a trench while ensuring safety without using expensive ancillary facilities.SOLUTION: A silicon carbide semiconductor device manufacturing method comprises: a process of arranging a silicon carbide semiconductor substrate W having a trench T in a non-hermetically sealed container 10 with the trench T facing downward; a process of arranging a silicon material in the non-hermetically sealed container 10 and below the silicon carbide semiconductor substrate W so as to face the silicon carbide semiconductor substrate W; a process of allowing an inert gas to flow into the non-hermetically sealed container 10; a process of heating the silicon material in the non-hermetically sealed container 10 to melt the silicon material; and a process of heating the silicon carbide semiconductor substrate W. |
