SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR ELEMENT
摘要
An infrared ray absorbing film (8) is selectively formed on a surface of an n - -type silicon carbide substrate (1). A p-type contact pattern (9) including aluminum and a Ni pattern (10) including nickel are selectively formed in this order on the n - -type silicon carbide substrate (1), in an area excluding an area in which the infrared ray absorbing film (8) is formed. The n - -type silicon carbide substrate (1) is thereafter heated using a rapid annealing process to form an ohmic electrode that includes the p-type contact pattern (9) and the Ni pattern (10) converted into silicide.
申请公布号
EP3043376(A1)
申请公布日期
2016.07.13
申请号
EP20140842165
申请日期
2014.08.08
申请人
FUJI ELECTRIC CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY