Method for growing beta phase of gallium oxide (ß-Ga2O3) single crystals from the melt contained within a metal crucible by controlling the partial pressure of oxygen.

摘要

A method for growing beta phase of gallium oxide (²-Ga 2 O 3 ) single crystals from the melt contained within a metal crucible surrounded by a thermal insulation and heated by a heater. A growth atmosphere provided into a growth furnace has a variable oxygen concentration or partial pressure in such a way that the oxygen concentration reaches a growth oxygen concentration value (C2, C2', C2") in the concentration range (SC) of 5 - 100 vol. % below the melting temperature (MT) of Ga 2 O 3 or at the melting temperature (MT) or after complete melting of the Ga 2 O 3 starting material adapted to minimize creation of metallic gallium amount and thus eutectic formation with the metal crucible. During the crystal growth step of the ²-Ga 2 O 3 single crystal from the melt at the growth temperature (GT) the growth oxygen concentration value (C2, C2', C2") is maintained within the oxygen concentration range (SC).