REFLECTIVE PHOTOMASK AND PRODUCTION METHOD THEREFOR

摘要

A reflective photomask (10) includes: a substrate (11); a multilayer reflection film (12) formed on the substrate and reflecting exposure light including light with a wavelength of 5 nm to 15 nm for lithography; an absorption film (14) formed on the multilayer reflection film (12) and absorbing the exposure light, and formed therein with a circuit pattern (15) or a circuit pattern forming region where the circuit pattern is formed; a shading region (B) formed by removing part of the multilayer reflection film (12) and the absorption film (14) on the substrate (11), on an outer peripheral side of the circuit pattern (15) or the circuit pattern forming region to shade part of the exposure light reflected by the multilayer reflection film (12); and a plurality of projections (1) formed at a pitch of 3000 nm or less on part of a surface (1b) of the substrate exposed in the shading region (B), and suppressing reflection of out-of-band light with a wavelength of 140 nm to 800 nm included in the exposure light and incident on the shading region (B).