METHOD FOR FORMING INTERMEDIATE LAYER FORMED BETWEEN SUBSTRATE AND DLC FILM, METHOD FOR FORMING DLC FILM, AND INTERMEDIATE LAYER FORMED BETWEEN SUBSTRATE AND DLC FILM.

摘要

This method for forming an intermediate layer, which uses a PVD method to form an intermediate layer formed between a substrate and a DLC film, has a Ti layer forming step for forming a Ti layer on the substrate, and a TiC layer forming step for forming a TiC layer on the Ti layer. In the Ti layer forming step, Ar gas is supplied into the chamber into which the substrate is conveyed, and the Ti layer is formed with the film formation pressure in the rane of 0.4-1 Pa inclusive; and in the TiC layer forming step, Ar gas and CH4 gas are supplied into the chamber, and, with the film formation pressure in the range of at least 0.2 Pa and less than 0.4 Pa, the TiC layer is formed by imposing to the substrate a second bias voltage that is higher than -100 V and that is higher than a first bias voltage imposed on the substrate in the Ti layer forming step.