发明名称 フォトダイオード
摘要 PROBLEM TO BE SOLVED: To achieve improvement in sensitivity across an entire use wavelength band required and inhibition of reduction in a frequency response bandwidth.SOLUTION: In a photodiode, at least one of a layer thickness and a complex refractive index of each of a first semiconductor layer 102, a light-absorption layer, a second semiconductor layer 104 and a reflection layer 108 is set such that a phase difference &Dgr; between two partial waves E1, E2 which have an optical path difference by one bounce of light which is incident from the side of a substrate 101 and bounces between the reflection layer 108 and the first semiconductor layer 102 becomes &pgr;/4+2 N&pgr;≤&Dgr;≤3&pgr;/4+2 N&pgr; (N is an integer) at a center wavelength of a target wavelength.
申请公布号 JP5952105(B2) 申请公布日期 2016.07.13
申请号 JP20120142011 申请日期 2012.06.25
申请人 日本電信電話株式会社 发明人 吉松 俊英;村本 好史;中島 史人;児玉 聡
分类号 H01L31/10 主分类号 H01L31/10
代理机构 代理人
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