| 摘要 |
A semiconductor device includes a first conductivity type drift layer, a second conductivity type body layer, a first conductivity type source layer, a first conductivity type drain layer, a trench gate penetrating the body layer and contacting the drift layer, a second conductivity type first semiconductor layer surrounding a bottom of the trench gate and being separated from the body layer by the drift layer, a first conductivity type second semiconductor layer disposed along one of end portions of the trench gate in a longitudinal direction of the trench gate, one of end portions of the second semiconductor layer contacting the body layer and the other of the end portions of the second semiconductor layer contacting the first semiconductor layer, and a connecting layer, one of end portions of the connecting layer being connected to the body layer and the other of the end portions of the connecting layer being connected to the first semiconductor layer, the connecting layer contacting the second semiconductor layer, and the connecting layer being separated from the one of the end portions of the trench gate in the longitudinal direction of the trench gate by the second semiconductor layer. |
