| 摘要 |
The present invention improves the reliability of a power semiconductor module. This power semiconductor module is provided with: a first power semiconductor element for converting a direct-current electrical current into an alternating-current electrical current; a first conductor connected via a solder material to the first power semiconductor element; a first heat dissipation base made of metal; and a first insulating layer arranged between the first heat dissipation base and the first conductor and bonded to the first heat dissipation base and the first conductor. The first insulating layer has a first region constituted of an inorganic material and an organic material, and a second region having less of the inorganic material than the first region and more of the organic material than the first region. The second region is formed so that, projecting from the perpendicular direction of the plane of bonding with the first conductor in the first insulating layer, an oblique shadow section of the second region overlaps with an oblique shadow section of a peripheral edge section of the first conductor. |
