| 摘要 |
PURPOSE:To obtain an ohmic connection for an n-type semiconductor boron nitride by forming an electrode by a metal or an alloy which includes silicon (Si) or sulfuric (S) on an n-type semiconductor cubic boron nitride. CONSTITUTION:An electrode is formed on an n-type semiconductor cubic boron nitride by a metal or an alloy which includes Si or S. In this case, the Si or S within the electrode is activated due to heating of a substrate when forming an electrode, radiant heat when performing deposition of electrode, or annealing after forming the electrode, thus resulting in diffusion into an adjacent cubic boron nitride. An electrode material as a mother body including the Si or S is Cr, W, Mn, Co, Ni, Pt, Ag, Zn, WC, MnZn, Ni2B, PtPd, AgAl etc., thus obtaining ohmic connection electrode. |
