发明名称 SUBSTRATE STAGE AND PLASMA PROCESSING APPARATUS
摘要 Provided is a technology capable of suppressing the generation of particles or an abnormal discharge in a substrate stage around which a ring member formed of an insulating material is disposed. The substrate stage (3) provided in a plasma processing apparatus includes: a substrate stage body having a prism shape, and formed of a metal material; a recessed portion (61) forming a coupling portion formed on the lateral portion of the substrate stage body; and a positioning member (7) coupled to the recessed portion (61) to be mounted on the substrate stage body. Protruding portions (72, 73) are provided on an upper portion of the positioning member (7). A ring member (5) is mounted on the positioning member (7) such that recessed portions (55, 56) formed in the lower surface of the ring member (5) are interlocked with the protruding portions (72, 73). Thus, the upper surface of the ring member (5) is configured as a flat surface having no hole passing therethrough in a vertical direction, and a gap causing the generation of particles or a gap causing an abnormal discharge generated by fixing the ring member to the substrate stage with screws from the upper surface of the ring member is not formed, thereby suppressing the generation of the particles or abnormal discharge.
申请公布号 KR20160079689(A) 申请公布日期 2016.07.06
申请号 KR20150184048 申请日期 2015.12.22
申请人 TOKYO ELECTRON LIMITED 发明人 HEMMI ATSUSHI;MINAMI MASATO;SASAKI YOSHIHIKO
分类号 H01L21/02;H01L21/3065;H01L21/683;H01L21/687 主分类号 H01L21/02
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