| 摘要 |
A dosimeter and an associated method for detecting radiation are provided. A dosimeter includes a complementary pair of transistors, such as a first transistor that is doped in accordance with a first conductivity type, such as an n-doped metal oxide semiconductor field effect transistor (MOSFET) and a second transistor that is doped in accordance with a second conductivity type, different than the first conductivity type, such as a p-doped MOSFET. The first and second transistors may be configured to generate respective outputs that shift in opposite directions in response to radiation. The dosimeter may also include a circuit element configured to determine a measure of the radiation based upon a difference between the respective outputs of the first and second transistors. The circuit element may include an amplifier configured to amplify the difference between the respective outputs of the first and second transistors. |
