| 摘要 |
PROBLEM TO BE SOLVED: To remove deposits in a processing chamber so as not to leave a residual film.SOLUTION: A manufacturing method of a semiconductor device includes: a substrate carry-in process where a substrate holder holding a substrate and a heat insulation body is carried in a processing chamber; a film formation process where a material gas is supplied to the processing chamber to form a film on the substrate; a substrate carry-out process where the substrate holder holding the substrate, which has been subject to the processing, is carried out from the processing chamber; a first cleaning process where a cleaning gas is supplied to the processing chamber while a substrate housing region in the processing chamber is heated at a first temperature and a heat insulation body housing region in the processing chamber is heated at a second temperature higher than the first temperature in a state that the substrate is not placed in the processing chamber; and a second cleaning process where the cleaning gas is supplied to the processing chamber while the heat insulation body housing region is heated at a third temperature and the substrate housing region is heated at a fourth temperature lower than the third temperature in the state that the substrate is not placed in the processing chamber. |
