发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME |
摘要 |
A semiconductor device and method of forming the same is described. In an example, a polysilicon layer is deposited on a substrate having at least one polysilicon ring. The substrate is doped using the polysilicon layer as a mask to form doped regions in the substrate. A dielectric layer is deposited over the polysilicon layer and the substrate. The dielectric layer is etched to expose portions of the polysilicon layer. A metal layer is deposited on the dielectric layer. The metal layer, the dielectric layer, and the exposed portions of the polysilicon layer are etched such that at least a portion of each polysilicon ring is removed. |
申请公布号 |
EP3039712(A1) |
申请公布日期 |
2016.07.06 |
申请号 |
EP20130892776 |
申请日期 |
2013.08.30 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
GE, NING;CHIA, LEONG YAP;LEE, PIN CHIN;RANDO, JOSE JEHROME |
分类号 |
H01L21/336;H01L21/28;H01L21/8234;H01L29/08;H01L29/66;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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