| 发明名称 |
N-TYPE SIC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME |
| 摘要 |
A n-type SiC single crystal with low resistivity and low threading dislocation density is provided, which is achieved by a n-type SiC single crystal containing germanium and nitrogen, wherein the density ratio of the germanium and the nitrogen [Ge/N] satisfies the relationship 0.17 < [Ge/N] < 1.60. |
| 申请公布号 |
EP3040452(A1) |
申请公布日期 |
2016.07.06 |
| 申请号 |
EP20140839731 |
申请日期 |
2014.07.23 |
| 申请人 |
TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
SHIRAI, TAKAYUKI |
| 分类号 |
C30B29/36;C30B9/10;C30B17/00;C30B19/04;C30B19/06;C30B19/12 |
主分类号 |
C30B29/36 |
| 代理机构 |
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