发明名称 METHOD FOR ETCHING A MASK
摘要 A system and method for transferring a pattern from an overlying layer into an underlying layer, while laterally trimming a feature present within the pattern is described. The pattern transfer is performed using an etch process according to a process recipe, wherein at least one variable parameter within the process recipe is adjusted given a target trim amount. The adjustment of the variable parameter is achieved using a process model established for relating trim amount data with the variable parameter.
申请公布号 EP1730769(B1) 申请公布日期 2016.07.06
申请号 EP20050713181 申请日期 2005.02.08
申请人 TOKYO ELECTRON LIMITED 发明人 YUE, HONGYU;YAMASHITA, ASAO
分类号 H01L21/66;H01L21/311;H01L21/32 主分类号 H01L21/66
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