发明名称 |
METHOD FOR ETCHING A MASK |
摘要 |
A system and method for transferring a pattern from an overlying layer into an underlying layer, while laterally trimming a feature present within the pattern is described. The pattern transfer is performed using an etch process according to a process recipe, wherein at least one variable parameter within the process recipe is adjusted given a target trim amount. The adjustment of the variable parameter is achieved using a process model established for relating trim amount data with the variable parameter. |
申请公布号 |
EP1730769(B1) |
申请公布日期 |
2016.07.06 |
申请号 |
EP20050713181 |
申请日期 |
2005.02.08 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
YUE, HONGYU;YAMASHITA, ASAO |
分类号 |
H01L21/66;H01L21/311;H01L21/32 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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