HEMT-COMPATIBLE LATERAL RECTIFIER STRUCTURE

摘要

The disclosure relates to a high electron mobility transistor-compatible power lateral field-effect rectifier (L-FER) device. In embodiments, a rectifier device has an electron supply layer located on a layer of a semiconductor material at a position between anode and cathode terminals. A layer of doped III-N semiconductor material is arranged on the electron supply layer. A passivation layer is located on the electron supply layer and the layer of the doped III-N semiconductor material. A gate structure is arranged on the layer of the doped III-N semiconductor material and the passivation layer. The layer of the doped III-N semiconductor material controls threshold voltage of the rectifier device. The passivation layer alleviates current reduction caused by high-temperature reverse bias (HTRB) stress. Therefore, reliability of an L-FER device can be improved.