| 摘要 |
The stage (100) has a spring mechanism (107) switching between positions in which a selected positioning arrangement (101) is orientated toward an ion beam of an ion beam etching apparatus such that a sample (104) in the selected positioning arrangement is exposed to the ion beam while conversely a remaining non-selected positioning arrangements (102, 103) face away from the ion beam. A protective divider (109a, 109b) is arranged between the selected positioning arrangement that is oriented toward the ion beam and the remaining non-selected positioning arrangements face away from the ion beam. Independent claims are also included for the following: (1) a sample stage flange comprising a flange housing (2) a method for sequentially preparing two samples in an ion beam etching unit. |
