发明名称 半導体装置の作製方法
摘要 Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.
申请公布号 JP5947864(B2) 申请公布日期 2016.07.06
申请号 JP20140235796 申请日期 2014.11.20
申请人 株式会社半導体エネルギー研究所 发明人 山崎 舜平;小山 潤;三宅 博之
分类号 H01L21/336;H01L29/786;H01L51/50 主分类号 H01L21/336
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