发明名称 サファイア単結晶育成用坩堝およびサファイア単結晶育成用坩堝の製造方法
摘要 An object of this invention is to provide a crucible for growing a sapphire single crystal, which is optimized for providing a sapphire single crystal and is reusable. A crucible for growing a sapphire single crystal of this invention includes: a base material (3) containing molybdenum as a main component and having a crucible shape; and a coating layer (5) with which only an inner periphery of the base material (3) is coated and which is formed of tungsten and inevitable impurities, in which the coating layer (5) has a surface roughness Ra of 5 μm or more and 20 μm or less.
申请公布号 JP5947389(B2) 申请公布日期 2016.07.06
申请号 JP20140538381 申请日期 2013.09.12
申请人 株式会社アライドマテリアル 发明人 加藤 昌宏;渡辺 慎
分类号 C30B29/20;C30B11/00;F27B14/10 主分类号 C30B29/20
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