| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetector capable of reducing a chip area when a proximity sensor and an illuminance sensor are formed into one chip.SOLUTION: A light-receiving section has a first light-receiving element 50 and a second light-receiving element 51 which are integrally formed by using a semiconductor, and is provided with a p-type substrate 1 common to the first light-receiving element 50 and the second light-receiving element 51. The first light-receiving element 50 has a first photodiode PD1, a second photodiode PD2 and a third photodiode PD3 formed therein with each different depth from a light-receiving surface. The second light-receiving element 51 is provided with an infrared ray transmission filter 20, and has a fourth photodiode PD11, a fifth photodiode PD12 and a sixth photodiode PD13 formed therein with each different depth from the light-receiving surface. The illuminance of ambient light is measured from a photo current output from the first light-receiving element 50 having a sensitivity peak in a visible light region, and a photo current output from the second light-receiving element having a sensitivity peak in an infrared region. |
