MOSFET devices and method to fabricate them

摘要

A semiconductor device is disclosed. The device comprises a first MOSFET transistor. The transistor comprises a substrate, a first high-k dielectric layer upon the substrate, a first dielectric capping layer upon the first high-k dielectric, and a first gate electrode made of a semiconductor material of a first doping level and a first conductivity type upon the first dielectric capping layer. The first dielectric capping layer comprises Scandium.