| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor which has a high breakdown voltage and a low on-resistance.SOLUTION: The field effect transistor includes: a first semiconductor part made of silicon, germanium, or silicon germanium; a second semiconductor part made of a nitride-based semiconductor; a diffusion preventing layer which is formed between the first semiconductor part and the second semiconductor part and prevents atomic diffusion between the first semiconductor part and the second semiconductor part; a gate insulating film formed on a surface of the first semiconductor part; and a gate electrode formed on the gate insulating film. |
