| 摘要 |
A semiconductor device includes: a first transistor that includes a first gate electrode, a first source electrode, a first drain electrode, and a first nitride semiconductor laminate that includes a first electron transit layer and a first electron supply layer; a second transistor that includes a second gate electrode, a second source electrode, a second drain electrode, and a second nitride semiconductor laminate that includes a second electrode transit layer and a second electron supply layer, the second drain electrode being a common electrode that also serves as the first source electrode, the second electron transit layer having part that underlies the second gate electrode and that contains a p-type dopant; and a p-type-dopant-diffusion-blocking layer. |
