发明名称 SUBSTRATE PROCESSING APPARATUS
摘要 The present invention is to independently process a plurality of substrates within a processing container to have in-plane uniformity. A wafer processing apparatus comprises: a processing container configured to air-tightly accommodate wafers; a plurality of loading stands configured to load the wafers within the processing container; a process gas supply part configured to supply process gas toward the wafers from an upper part of the loading stand; an exhaust mechanism configured to carry the process gas out of the processing container; a partition wall disposed within the processing container and configured to individually surround the loading stands with a gap left between the partition wall and each of the loading stands; and cylindrical inner walls (15) disposed on the bottom of the processing container and configured to individually surround the loading stands with a gap left between each of the inner walls and each of the loading stands. Slits (15c) are formed in the inner walls (15). The process gas within processing spaces is exhausted via the slits. The inner walls (15) include partition plates (110) for bypassing the process gas of the processing space so that the process gas does not directly flow into the slits (15c).
申请公布号 KR20160079688(A) 申请公布日期 2016.07.06
申请号 KR20150183925 申请日期 2015.12.22
申请人 TOKYO ELECTRON LIMITED 发明人 AMIKURA MANABU;HINATA TOSHIKI
分类号 H01L21/02;H01L21/60;H01L21/673;H01L21/677;H01L21/683;H01L21/687 主分类号 H01L21/02
代理机构 代理人
主权项
地址
您可能感兴趣的专利