| 摘要 |
A sputtering target comprising a sintered body that contains an oxide containing indium, zinc and a metal M, also contains In2O3, MIn2O4 and In2O3(ZnO)m (1 ≤ m ≤ 20) as crystal phases, and has a relative density of 95% or more, wherein the sintered body contains structures each having a higher In content than those in regions surrounding the structures, structures each having a higher Zn content than those in regions surrounding the structures and structures each having a higher metal M content than those in regions surrounding the structures, and wherein each of the average diameter of circles which surround the structures each having a higher In content and each of which has a smallest area and the average diameter of circles which surround the structures each having a higher metal M content and each of which has a smallest area is 25 μm or less. |
