OXIDE DERIVATIVE, METHOD FOR PRODUCING SAME, PRECURSOR OF OXIDE DERIVATIVE, SOLID-STATE ELECTRONIC DEVICE AND METHOD FOR MANUFACTURING SOLID-STATE ELECTRONIC DEVICE

摘要

[Problem] To provide an oxide derivative having excellent characteristics and a solid-state electronic device (for example, a high frequency filter, a patch antenna, a capacitor, a semiconductor device or a micro-electro-mechanical system) which is provided with this oxide derivative. [Solution] An oxide layer 30 that is formed of one oxide derivative according to the present invention contains an oxide which is composed of bismuth (Bi) and niobium (Nb) and has a crystal phase having a pyrochlore crystal structure (and which may contain unavoidable impurities). If the number of bismuth (Bi) atoms is taken as 1, the number of niobium (Nb) atoms is from 1.3 to 1.7 (inclusive).