| 发明名称 |
Substrate processing method, non-transitory storage medium and heating apparatus |
| 摘要 |
A substrate processing method includes a coating step that applies a coating liquid to a substrate having a front surface on which a pattern is formed, thereby forming a coating film on the substrate, a film removing step that heats the substrate to gasify components of the coating film thereby to reduce a thickness of the film, and a film curing step that is performed after or simultaneously with the film removing step and that heats the substrate to cure the coating film through crosslinking reaction. The film removing step is performed under conditions ensuring that an average thickness of the cured coating film is not greater than 80% of an average thickness of the coating film before being subjected to the film removing step. |
| 申请公布号 |
US2016189974(A1) |
申请公布日期 |
2016.06.30 |
| 申请号 |
US201514757850 |
申请日期 |
2015.12.24 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Shiozawa Takahiro;Ueda Kenichi |
| 分类号 |
H01L21/3105;H01L21/67;H05B3/00;H01L21/027 |
主分类号 |
H01L21/3105 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing method comprising:
a coating step that applies a coating liquid to a substrate having a front surface on which a pattern is formed, thereby forming a coating film on the substrate; a film removing step that heats the substrate to gasify components of the coating film thereby to reduce a thickness of the film; and a film curing step that is performed after or simultaneously with the film removing step and that heats the substrate to cure the coating film through crosslinking reaction, wherein the film removing step is performed under conditions ensuring that an average thickness of the cured coating film is not greater than 80% of an average thickness of the coating film before being subjected to the film removing step. |
| 地址 |
Tokyo JP |
