METHOD FOR PRODUCING SEMICONDUCTOR EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SOLID-STATE IMAGING ELEMENT

摘要

The present invention provides a method for producing a semiconductor epitaxial wafer that has higher gettering ability. A method for producing a semiconductor epitaxial wafer 100 according to the present invention is characterized by comprising: a first step wherein a surface 10A of a semiconductor wafer 10 is irradiated with cluster ions 12, so that a modified layer 14, in which a constituent element of the cluster ions is solid-solved, is formed in the surface portion of the semiconductor wafer; and a second step wherein an epitaxial layer 18 is formed on the modified layer 14 of the semiconductor wafer. This method for producing a semiconductor epitaxial wafer 100 is also characterized in that the first step is carried out, while maintaining the temperature of the semiconductor wafer 10 lower than 25°C.