| 摘要 |
A MOS gate structure is provided on a p-type base layer (4) side of a silicon carbide semiconductor body obtained by a successive epitaxial growth of an n-type drift layer (2) and the p-type base layer (4) on a front surface of an n+-type silicon carbide substrate (1). On a front surface of the body, a step part (103) produced between the p-type base layer (4) and the n-type drift layer (2), and a flat part (104) disposed further toward the outer side than the step part are provided in a termination structure part (102). In a surface layer of the n-type drift layer (2), a p+-type base region (3) constituting the MOS gate structure is formed in contact with the p-type base layer (4). The outermost p+-type base region (3) extends from an active region (101) to the flat part (104), and an entire lower side of this portion is covered by the innermost p—-type region (5a) that constitutes a voltage resistant structure provided in the flat part (104). In this way, a semiconductor device with increased voltage resistance can be provided. |
