| 摘要 |
A method for cleaning silicon carbide deposits, characterized in that a gas mixture comprising 1-20 vol% of fluorine gas and 80-99 vol% of an inert gas is flown at a temperature of 200-500oC in silicon carbide deposits deposited on a silicon carbide-coated member in an SiC epitaxial furnace. As the inert gas, nitrogen gas or argon gas is preferred. According to the present invention, silicon carbide-containing deposits deposited on a base material, said base material (SiC coat) being provided with a polycrystalline SiC coating layer that is formed on the surface of a carbon base material by the CVD method, can be selectively removed with the use of fluorine gas, in spite of the fact that fluorine gas with a purity of 100% has been considered as unsuitable as a cleaning gas for removing SiC deposits. |
