MASK BLANK, PHASE SHIFT MASK, METHOD FOR MANUFACTURING PHASE SHIFT MASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Provided is a mask blank provided with a phase shift film which minimizes a change in the transmittance and the phase shift amount in response to the exposure light from an ArF excimer laser, and facilitates detecting the end point of an etching for detecting the boundary between the phase shift film and a transmissive substrate when performing EB defect correction. The phase shift film transmits the exposure light from an ArF excimer laser with a transmittance no less than 2 % and less than 10 %, and creates a phase difference of no less than 150 degrees and no more than 190 degrees between the exposure light passing through the phase shift film and the exposure light passing through the air at the same distance as the thickness of the phase shift film. The phase shift film includes a laminate structure comprising a lower layer and an upper layer. The lower layer comprises a material that contains metal and silicon but substantially does not contain oxygen. The upper layer comprises a material that contains metal, silicon, nitride, and oxygen. The lower layer is thinner than the upper layer. The ratio of metal content to the total of metal and silicon content in the upper layer is smaller than that of the lower layer.