发明名称 AMORPHOUS-SELENIUM BASED X-RAY DETECTOR FOR DECREASING LEAKAGE CURRENT
摘要 The present invention relates to an X-ray detector based on amorphous selenium, facilitating introduction of a pair of electron-holes generated by an X-ray in an amorphous selenium layer; and preventing a leakage current of an electron injected from a metal electrode to the amorphous selenium layer by an electric field through band gap engineering without doping As or CI to the amorphous selenium.
申请公布号 KR20160075912(A) 申请公布日期 2016.06.30
申请号 KR20140184422 申请日期 2014.12.19
申请人 KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE 发明人 HEO, DU CHANG;YANG, KEE DONG;JEON, SUNG CHAE;CHA, BO KYUNG
分类号 G01T1/24 主分类号 G01T1/24
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