AMORPHOUS-SELENIUM BASED X-RAY DETECTOR FOR DECREASING LEAKAGE CURRENT
摘要
The present invention relates to an X-ray detector based on amorphous selenium, facilitating introduction of a pair of electron-holes generated by an X-ray in an amorphous selenium layer; and preventing a leakage current of an electron injected from a metal electrode to the amorphous selenium layer by an electric field through band gap engineering without doping As or CI to the amorphous selenium.
申请公布号
KR20160075912(A)
申请公布日期
2016.06.30
申请号
KR20140184422
申请日期
2014.12.19
申请人
KOREA ELECTROTECHNOLOGY RESEARCH INSTITUTE
发明人
HEO, DU CHANG;YANG, KEE DONG;JEON, SUNG CHAE;CHA, BO KYUNG