Wafer to Wafer Bonding Process and Structures

摘要

Bonded structures and method of forming the same are provided. A conductive layer is formed on a first surface of a bonded structure, the bonded structure including a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate. A patterned mask having first openings and second openings is formed on the conductive layer, the first openings and the second openings exposing portions of the conductive layer. First portions of first bonding connectors are formed in the first openings and first portions of second bonding connectors are formed in the second openings. The conductive layer is patterned to form second portions of the first bonding connectors and second portions of the second bonding connectors. The bonded structure is bonded to a third substrate using the first bonding connectors and the second bonding connectors.

主权项

1. A method comprising:
forming a conductive layer on a first surface of a bonded structure, the bonded structure comprising a first substrate bonded to a second substrate, the first surface of the bonded structure being an exposed surface of the first substrate; forming a patterned mask on the conductive layer, the patterned mask comprising first openings and second openings, the first openings and the second openings exposing portions of the conductive layer; forming first portions of first bonding connectors in the first openings and first portions of second bonding connectors in the second openings; patterning the conductive layer to form second portions of the first bonding connectors and second portions of the second bonding connectors, wherein the first portions of the first bonding connectors and the first portions of the second bonding connectors are used as a mask; and bonding the bonded structure to a third substrate using the first bonding connectors and the second bonding connectors, wherein the first bonding connectors and the second bonding connectors extend through third openings formed on a front side of the third substrate and contact conductive features exposed by the third openings.